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1. general description the 74aup1gu04 is a high-performance, low-power, low-voltage, si-gate cmos device, superior to most advanced cmos compatible families. this device ensures a very low static and dynamic power consumption across the entire v cc range from 0.8 v to 3.6 v. the 74aup1gu04 provides the single unbuffered inverting gate. 2. features n wide supply voltage range from 0.8 v to 3.6 v n high noise immunity n esd protection: u hbm jesd22-a114-c class 3a. exceeds 5000 v u mm jesd22-a115-a exceeds 200 v u cdm jesd22-c101-c exceeds 1000 v n low static power consumption; i cc = 0.9 m a (maximum) n latch-up performance exceeds 100 ma per jesd 78 class ii n inputs accept voltages up to 3.6 v n multiple package options n speci?ed from - 40 cto+85 c and - 40 c to +125 c 3. ordering information 74aup1gu04 low-power unbuffered inverter rev. 02 3 august 2006 product data sheet table 1. ordering information type number package temperature range name description version 74aup1gu04gw - 40 c to +125 c tssop5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 74aup1gu04gm - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm sot886 74aup1gu04gf - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1 0.5 mm sot891
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 2 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 4. marking 5. functional diagram 6. pinning information 6.1 pinning table 2. marking type number marking code 74aup1gu04gw pd 74aup1gu04gm pd 74aup1gu04gf pd fig 1. logic symbol fig 2. iec logic symbol fig 3. logic diagram mna108 ay 2 4 mna109 4 1 2 001aad073 540 w 50 w ay v cc fig 4. pin con?guration sot353-1 (tssop5) fig 5. pin con?guration sot886 (xson6) fig 6. pin con?guration sot891 (xson6) 74aup1gu04 n.c. v cc a gnd y 001aaf167 1 2 3 5 4 74aup1gu04 a 001aaf168 n.c. gnd n.c. v cc y transparent top view 2 3 1 5 4 6 74aup1gu04 a 001aaf169 n.c. gnd n.c. v cc y transparent top view 2 3 1 5 4 6
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 3 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 6.2 pin description 7. functional description [1] h = high voltage level; l = low voltage level. 8. limiting values [1] the input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] for tssop5 packages: above 87.5 c the value of p tot derates linearly with 4.0 mw/k. for xson6 packages: above 45 c the value of p tot derates linearly with 2.4 mw/k. table 3. pin description symbol pin description tssop5 xson6 n.c. 1 1 not connected a 2 2 data input a gnd 3 3 ground (0 v) y 4 4 data output y n.c. - 5 not connected v cc 5 6 supply voltage table 4. function table [1] input output a y lh hl table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage - 0.5 +4.6 v i ik input clamping current v i <0v - - 50 ma v i input voltage [1] - 0.5 +4.6 v i ok output clamping current v o <0v - - 50 ma v o output voltage [1] - 0.5 v cc + 0.5 v i o output current v o =0 vtov cc - 20 ma i cc supply current - +50 ma i gnd ground current - - 50 ma t stg storage temperature - 65 +150 c p tot total power dissipation t amb = - 40 c to +125 c [2] - 250 mw
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 4 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 9. recommended operating conditions 10. static characteristics table 6. recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 0.8 3.6 v v i input voltage 0 3.6 v v o output voltage 0 v cc v t amb ambient temperature - 40 +125 c d t/ d v input transition rise and fall rate v cc = 0.8 v to 3.6 v 0 200 ns/v table 7. static characteristics at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit t amb = 25 c v ih high-level input voltage v cc = 0.8 v to 3.6 v 0.75 v cc -- v v il low-level input voltage v cc = 0.8 v to 3.6 v - - 0.25 v cc v v oh high-level output voltage i o = - 20 m a; v cc = 0.8 v to 3.6 v v cc - 0.1 - - v i o = - 1.1 ma; v cc = 1.1 v 0.75 v cc -- v i o = - 1.7 ma; v cc = 1.4 v 1.11 - - v i o = - 1.9 ma; v cc = 1.65 v 1.32 - - v i o = - 2.3 ma; v cc = 2.3 v 2.05 - - v i o = - 3.1 ma; v cc = 2.3 v 1.9 - - v i o = - 2.7 ma; v cc = 3.0 v 2.72 - - v i o = - 4.0 ma; v cc = 3.0 v 2.6 - - v v ol low-level output voltage i o = 20 m a; v cc = 0.8 v to 3.6 v - - 0.1 v i o = 1.1 ma; v cc = 1.1 v - - 0.3 v cc v i o = 1.7 ma; v cc = 1.4 v - - 0.31 v i o = 1.9 ma; v cc = 1.65 v - - 0.31 v i o = 2.3 ma; v cc = 2.3 v - - 0.31 v i o = 3.1 ma; v cc = 2.3 v - - 0.44 v i o = 2.7 ma; v cc = 3.0 v - - 0.31 v i o = 4.0 ma; v cc = 3.0 v - - 0.44 v i i input leakage current v i = gnd to 3.6 v; v cc = 0 v to 3.6 v - - 0.1 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 0.8 v to 3.6 v - - 0.5 m a c i input capacitance v cc = 0 v to 3.6 v; v i = gnd or v cc - 1.5 - pf c o output capacitance v o = gnd; v cc = 0 v - 1.8 - pf
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 5 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter t amb = - 40 c to +85 c v ih high-level input voltage v cc = 0.8 v to 3.6 v 0.75 v cc -- v v il low-level input voltage v cc = 0.8 v to 3.6 v - - 0.25 v cc v v oh high-level output voltage i o = - 20 m a; v cc = 0.8 v to 3.6 v v cc - 0.1 - - v i o = - 1.1 ma; v cc = 1.1 v 0.7 v cc -- v i o = - 1.7 ma; v cc = 1.4 v 1.03 - - v i o = - 1.9 ma; v cc = 1.65 v 1.30 - - v i o = - 2.3 ma; v cc = 2.3 v 1.97 - - v i o = - 3.1 ma; v cc = 2.3 v 1.85 - - v i o = - 2.7 ma; v cc = 3.0 v 2.67 - - v i o = - 4.0 ma; v cc = 3.0 v 2.55 - - v v ol low-level output voltage i o = 20 m a; v cc = 0.8 v to 3.6 v - - 0.1 v i o = 1.1 ma; v cc = 1.1 v - - 0.3 v cc v i o = 1.7 ma; v cc = 1.4 v - - 0.37 v i o = 1.9 ma; v cc = 1.65 v - - 0.35 v i o = 2.3 ma; v cc = 2.3 v - - 0.33 v i o = 3.1 ma; v cc = 2.3 v - - 0.45 v i o = 2.7 ma; v cc = 3.0 v - - 0.33 v i o = 4.0 ma; v cc = 3.0 v - - 0.45 v i i input leakage current v i = gnd to 3.6 v; v cc = 0 v to 3.6 v - - 0.5 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 0.8 v to 3.6 v - - 0.9 m a t amb = - 40 c to +125 c v ih high-level input voltage v cc = 0.8 v to 3.6 v 0.75 v cc -- v v il low-level input voltage v cc = 0.8 v to 3.6 v - - 0.25 v cc v v oh high-level output voltage i o = - 20 m a; v cc = 0.8 v to 3.6 v v cc - 0.11 - - v i o = - 1.1 ma; v cc = 1.1 v 0.6 v cc -- v i o = - 1.7 ma; v cc = 1.4 v 0.93 - - v i o = - 1.9 ma; v cc = 1.65 v 1.17 - - v i o = - 2.3 ma; v cc = 2.3 v 1.77 - - v i o = - 3.1 ma; v cc = 2.3 v 1.67 - - v i o = - 2.7 ma; v cc = 3.0 v 2.40 - - v i o = - 4.0 ma; v cc = 3.0 v 2.30 - - v table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 6 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 11. dynamic characteristics v ol low-level output voltage i o = 20 m a; v cc = 0.8 v to 3.6 v - - 0.11 v i o = 1.1 ma; v cc = 1.1 v - - 0.33 v cc v i o = 1.7 ma; v cc = 1.4 v - - 0.41 v i o = 1.9 ma; v cc = 1.65 v - - 0.39 v i o = 2.3 ma; v cc = 2.3 v - - 0.36 v i o = 3.1 ma; v cc = 2.3 v - - 0.50 v i o = 2.7 ma; v cc = 3.0 v - - 0.36 v i o = 4.0 ma; v cc = 3.0 v - - 0.50 v i i input leakage current v i = gnd to 3.6 v; v cc = 0 v to 3.6 v - - 0.75 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 0.8 v to 3.6 v - - 1.4 m a table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit table 8. dynamic characteristics voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) c l = 5 pf t pd propagation delay a to y; see figure 7 [2] v cc = 0.8 v - 6.2 - - - - ns v cc = 1.1 v to 1.3 v 0.9 2.3 4.4 0.9 4.8 5.3 ns v cc = 1.4 v to 1.6 v 0.7 1.7 3.1 0.6 3.4 3.8 ns v cc = 1.65 v to 1.95 v 0.5 1.4 2.6 0.5 2.9 3.2 ns v cc = 2.3 v to 2.7 v 0.4 1.1 2.0 0.4 2.3 2.6 ns v cc = 3.0 v to 3.6 v 0.3 1.0 1.8 0.3 2.1 2.4 ns c l = 10 pf t pd propagation delay a to y; see figure 7 [2] v cc = 0.8 v - 9.6 - - - - ns v cc = 1.1 v to 1.3 v 1.2 3.1 6.1 1.2 6.8 7.5 ns v cc = 1.4 v to 1.6 v 1.0 2.3 4.0 0.9 4.6 5.1 ns v cc = 1.65 v to 1.95 v 0.8 1.9 3.3 0.7 3.8 4.2 ns v cc = 2.3 v to 2.7 v 0.6 1.5 2.7 0.6 3.1 3.5 ns v cc = 3.0 v to 3.6 v 0.5 1.3 2.4 0.5 2.7 3.0 ns
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 7 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter [1] all typical values are measured at nominal v cc . [2] t pd is the same as t plh and t phl [3] c pd is used to determine the dynamic power dissipation (p d in m w). p d =c pd v cc 2 f i n+ s (c l v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; v cc = supply voltage in v; n = number of inputs switching; s (c l v cc 2 f o ) = sum of the outputs. c l = 15 pf t pd propagation delay a to y; see figure 7 [2] v cc = 0.8 v - 13.0 - - - - ns v cc = 1.1 v to 1.3 v 1.6 3.8 7.9 1.4 8.8 9.7 ns v cc = 1.4 v to 1.6 v 1.3 2.8 4.9 1.1 5.7 6.3 ns v cc = 1.65 v to 1.95 v 1.0 2.3 4.0 0.9 4.7 5.2 ns v cc = 2.3 v to 2.7 v 0.8 1.9 3.2 0.8 3.7 4.1 ns v cc = 3.0 v to 3.6 v 0.7 1.6 2.9 0.7 3.3 3.7 ns c l = 30 pf t pd propagation delay a to y; see figure 7 [2] v cc = 0.8 v - 23.2 - - - - - v cc = 1.1 v to 1.3 v 2.4 6.0 13.1 2.2 14.8 16.3 ns v cc = 1.4 v to 1.6 v 2.0 4.2 7.6 1.8 9.0 9.9 ns v cc = 1.65 v to 1.95 v 1.7 3.6 6.1 1.5 7.2 8.0 ns v cc = 2.3 v to 2.7 v 1.4 2.9 4.8 1.3 5.7 6.3 ns v cc = 3.0 v to 3.6 v 1.2 2.5 4.3 1.1 5.1 5.7 ns c l = 5 pf, 10 pf, 15 pf and 30 pf c pd power dissipation capacitance f = 1 mhz; v i = gnd to v cc [3] v cc = 0.8 v - 1.2 - - - - pf v cc = 1.1 v to 1.3 v - 1.1 - - - - pf v cc = 1.4 v to 1.6 v - 1.2 - - - - pf v cc = 1.65 v to 1.95 v - 1.4 - - - - pf v cc = 2.3 v to 2.7 v - 2.8 - - - - pf v cc = 3.0 v to 3.6 v - 4.4 - - - - pf table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c)
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 8 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 12. waveforms [1] for measuring enable and disable times r l =5k w , for measuring propagation delays, setup and hold times and pulse width r l =1m w . measurement points are given in t ab le 9 . logic levels: v ol and v oh are typical output voltage drop that occur with the output load. fig 7. the data input (a) to output (y) propagation delays mna640 t phl t plh v m v m a input y output gnd v i v oh v ol table 9. measurement points supply voltage output input v cc v m v m v i t r = t f 0.8 v to 3.6 v 0.5 v cc 0.5 v cc v cc 3.0 ns test data is given in t ab le 10 . de?nitions for test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. r t = termination resistance should be equal to the output impedance z o of the pulse generator. v ext = external voltage for measuring switching times. fig 8. load circuitry for switching times 001aac521 pulse generator dut r t v i v o v ext v cc r l 5 k w c l table 10. test data supply voltage load v ext v cc c l r l [1] t plh , t phl t pzh , t phz t pzl , t plz 0.8 v to 3.6 v 5 pf, 10 pf, 15 pf and 30 pf 5 k w or 1 m w open gnd 2 v cc
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 9 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 13. additional characteristics v o is constant. fig 9. test set-up for measuring forward transconductance mna050 v cc r bias = 560 k w input 0.47 m f 100 m f output a gnd i o v i (f = 1 khz) g fs i o d v i d -------- - = t amb =25 c. fig 10. typical forward transconductance as a function of supply voltage v cc (v) 04 3 12 001aad074 10 20 30 g fs (ma/v) 0
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 10 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 14. application information some applications for the 74aup1gu04 are: ? linear ampli?er (see figure 11 ) ? crystal oscillator (see figure 12 ). remark: all values given are typical values unless otherwise speci?ed. z l >10k w . r1 3 3k w . r2 1m w . open loop ampli?cation: a ol = 20. voltage ampli?cation: . v o(p-p) =v cc - 1.5 v centered at 0.5 v cc . unity gain bandwidth product is 5 mhz. fig 11. linear ampli?er application c1 = 47 pf. c2 = 22 pf. r1 = 1 m w to 10 m w . r2 optimum value depends on the frequency and required stability against changes in v cc or average minimum i cc (i cc = 2 ma at v cc = 3.3 v and f = 10 mhz). fig 12. crystal oscillator application u04 r1 r2 v cc z l mna052 1 m f a v a ol 1 r1 r2 ------ - 1a ol + () + ----------------------------------------- C = mna053 u04 out r2 r1 c1 c2
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 11 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 15. package outline fig 13. package outline sot353-1 (tssop5) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) q references outline version european projection issue date iec jedec jeita mm 0.1 0 1.0 0.8 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 e 1 1.3 2.25 2.0 0.60 0.15 7 0 0.1 0.1 0.3 0.425 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.46 0.21 sot353-1 mo-203 sc-88a 00-09-01 03-02-19 w m b p d z e e 1 0.15 13 5 4 q a a 2 a 1 l p (a 3 ) detail x l h e e c v m a x a y 1.5 3 mm 0 scale tssop5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 1.1
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 12 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter fig 14. package outline sot886 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot886 mo-252 sot886 04-07-15 04-07-22 dimensions (mm are the original dimensions) xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale notes 1. including plating thickness. 2. can be visible in some manufacturing processes. unit mm 0.25 0.17 1.5 1.4 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.5 0.6 a (1) max 0.5 0.04 1 6 2 5 3 4 6 (2) 4 (2) a
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 13 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter fig 15. package outline sot891 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot891 sot891 05-03-11 05-04-06 xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale dimensions (mm are the original dimensions) unit mm 0.20 0.12 1.05 0.95 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.35 0.55 a max 0.5 0.04 1 6 2 5 3 4 a
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 14 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 16. abbreviations 17. revision history table 11. abbreviations acronym description cdm charged device model cmos complementary metal oxide semiconductor dut device under test esd electrostatic discharge hbm human body model mm machine model ttl transistor-transistor logic table 12. revision history document id release date data sheet status change notice supersedes 74aup1gu04_2 20060803 product data sheet - 74aup1gu04_1 modi?cations: ? esd hbm and c pd values modi?ed in section 2 , t ab le 8 . ? added type number 74aup1gu04gf (xson6/sot891 package) 74aup1gu04_1 20050810 product data sheet - -
74aup1gu04_2 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 02 3 august 2006 15 of 16 philips semiconductors 74aup1gu04 low-power unbuffered inverter 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .semiconductors .philips .com. 18.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local philips semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 18.3 disclaimers general information in this document is believed to be accurate and reliable. however, philips semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes philips semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use philips semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a philips semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. philips semiconductors accepts no liability for inclusion and/or use of philips semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale philips semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .semiconductors .philips .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 18.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 19. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
philips semiconductors 74aup1gu04 low-power unbuffered inverter ? koninklijke philips electronics n.v. 2006. all rights reserved. for more information, please visit: http://www.semiconductors.philips.com. for sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. date of release: 3 august 2006 document identifier: 74aup1gu04_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 3 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 recommended operating conditions. . . . . . . . 4 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11 dynamic characteristics . . . . . . . . . . . . . . . . . . 6 12 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 additional characteristics . . . . . . . . . . . . . . . . . 9 14 application information. . . . . . . . . . . . . . . . . . 10 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 16 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 18 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 18.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 18.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 19 contact information. . . . . . . . . . . . . . . . . . . . . 15 20 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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